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Product Detailed Parameters
- Description：IGBT PT 1000V 16A TO-263AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：32 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 8A
- Power - Max：54 W
- Switching Energy：2.3mJ (off)
- Input Type：Standard
- Gate Charge：26.5 nC
- Td (on/off) @ 25°C：15ns/600ns
- Test Condition：800V, 8A, 120Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA8N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1 kV and a continuous collector current of 16 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.7 V. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in a D2PAK-3 (TO-263-3) surface-mount package with a maximum gate-emitter voltage rating of ±20 V.
Feature Summary
- Single IGBT configuration for high-voltage switching applications
- Low saturation voltage for efficient power handling
- Surface-mount D2PAK-3 packaging for automated assembly
Applications
- High-voltage power supply circuits
- Motor control systems
- Inverter topologies
Procurement Notes
Verify the Not Recommended for New Design (NRND) status before initiating any new product development, as this indicates potential discontinuation or obsolescence risks. Confirm the specific manufacturing date code and lot traceability requirements against your quality standards. Ensure that the D2PAK-3 soldering profile matches your reflow oven capabilities to prevent thermal damage during assembly. Check for RoHS compliance documentation if required by your regional regulations.
Selection Notes
Select this component when a single-switch solution with 1 kV blocking capability and moderate current handling is required in a compact surface-mount form factor. The 2.7 V saturation voltage offers a balance between conduction loss and cost compared to higher-performance devices. Consider the thermal resistance of the D2PAK-3 package and ensure adequate PCB copper area for heat dissipation given the 16 A continuous current rating.
Part Context
The IXGA8N100 belongs to the IXYS IGBT portfolio, designed for general-purpose high-voltage switching. It utilizes silicon technology and is intended for applications requiring reliable performance under high electrical stress. The TO-263-3 package provides a robust mechanical connection suitable for industrial environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official IXYS documentation for direct pin-compatible alternatives or functional equivalents.
