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The IXYS IXGC16N60C2 is a C2-Class High Speed IGBT in an ISOPLUS220 case. It features a DCB isolated mounting tab and electrically isolated back surface. Maximum ratings include VCES of 600V, IC25 of 20A, and PC of 63W at TC=25°C. The collector-emitter saturation voltage (VCE(sat)) is typically 2.7V at IC=12A and VGE=15V. Switching characteristics include td(on) of 25ns, tfi of 35ns typical, and Eoff of 60µJ typical at TJ=25°C. Thermal resistance RthJC is 2.0 K/W for the IGBT and 2.5 K/W for the integrated FRED diode.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision status and package marking details against official documentation. Ensure storage conditions comply with moisture sensitivity levels prior to assembly. Validate that the specific ordering suffix matches the required isolation and pinout configuration for your design.
Select this component for designs requiring electrical isolation between the mounting tab and circuit ground. The ISOPLUS220 package facilitates direct heatsink mounting without additional insulators. Consider the 600V breakdown voltage and 20A continuous current rating for medium-power switching requirements. Evaluate thermal performance using the specified junction-to-case resistance values under expected operating loads.
This device belongs to the HiPerFAST C2-Class series from IXYS, optimized for high-speed switching performance. It utilizes silicon gate technology to ensure drive simplicity similar to MOSFETs while providing the low conduction losses characteristic of IGBTs. The ISOPLUS220 package meets TO-273 mechanical outlines for compatibility with standard mounting hardware.
Verify pinout compatibility and thermal resistance specifications when substituting. Check if alternative packages require different mounting torque or insulation materials due to the isolated back surface design.
The component supports an isolation voltage of 2500 Vrms at 50/60Hz for one minute.
Yes, the IXGC16N60C2D1 variant includes an integrated Fast Recovery Epitaxial Diode (FRED).
The typical turn-off fall time (tfi) is 35 ns at TJ=25°C.