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The IXGC16N60C2D1 is a HiPerFAST C2-Class High Speed IGBT in an ISOPLUS220 case. It features an electrically isolated back surface and DCB isolated mounting tab. Rated at 600V VCES, it supports 20A continuous collector current at 25°C and 8A at 110°C. The device exhibits a maximum VCE(sat) of 3.0V at 12A/15V and a typical turn-off time (tfi) of 35ns. Total gate charge is 32nC. Thermal resistance RthJC is 2.0 K/W for the IGBT and 2.5 K/W for the integrated FRED diode.
Verify datasheet revision status before design finalization. Confirm package outline dimensions match ISOPLUS220 specifications. Check isolation voltage ratings against system requirements. Ensure thermal management aligns with specified junction temperature limits.
Select based on required switching frequency and thermal constraints. Compare VCE(sat) and switching losses against alternative topologies. Verify gate drive compatibility with specified threshold voltages. Consider integration benefits of the built-in FRED diode for synchronous rectification or freewheeling roles.
Part of the IXYS HiPerFAST C2-Class family designed for high-speed power switching. Utilizes advanced trench gate technology to minimize conduction and switching losses. The ISOPLUS220 package provides robust mechanical mounting and electrical isolation for industrial power electronics.
Direct substitutes must match 600V rating, TO-273 compatible footprint, and similar switching characteristics. Verify pinout compatibility and thermal resistance values. Cross-reference gate charge and saturation voltage for circuit performance equivalence.
The isolation voltage is 2500 Vrms at 50/60Hz for one minute.
Yes, it integrates a Fast Recovery Epitaxial Diode (FRED) with specific reverse recovery characteristics.
The typical turn-off time (tfi) is 35 ns under standard test conditions.