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Product Detailed Parameters
- Description：IGBT 2500V 23A ISOPLUS I4-PAC
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 20A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXGF20N250 is a high-voltage silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single configuration with a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 30 A at 25°C. The device operates within a temperature range of -55°C to +150°C, utilizing a TO-263 package for surface mount installation.
Feature Summary
- High voltage capability rated at 2.5 kV for robust operation in demanding electrical environments
- Surface mount construction in a TO-263 package for efficient PCB integration
- Silicon technology ensuring reliable switching performance under high thermal stress
Applications
- High voltage power supply circuits
- Industrial motor drive systems
- Inverter applications requiring high blocking voltage
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with the manufacturer or authorized distributors. Confirm that the component meets all required RoHS compliance standards and check for any recent product change notifications that may affect specifications or availability before finalizing procurement plans.
Selection Notes
Select this component when a single IGBT with 2.5 kV blocking capability is required in a surface mount format. Ensure the thermal management design supports the specified power dissipation limits. Compare against other IXYS high-voltage series to confirm compatibility with existing gate drive voltages and saturation voltage requirements.
Part Context
This part belongs to the IXYS high-voltage IGBT portfolio, designed for applications requiring significant voltage isolation. It complements other devices in the series offering similar voltage ratings but different current capacities or packaging styles, providing engineers with options for various thermal and spatial constraints in power electronics designs.
