IXGF20N300

$30.12

Description：IGBT 3000V 22A ISOPLUS I4-PAC
Series：-

SKU:ab0a7a3414d2 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 3000V 22A ISOPLUS I4-PAC
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：3000 V
Current - Collector (Ic) (Max)：22 A
Current - Collector Pulsed (Icm)：103 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 20A
Power - Max：100 W
Switching Energy：-
Input Type：Standard
Gate Charge：31 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：i4-Pac™-5 (3 Leads)
Supplier Device Package：ISOPLUS i4-PAC™
Grade：-
Qualification：-

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IXGF20N300

Overview

The IXYS IXGF20N300 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Very High Voltage series. It utilizes Non-Punch-Through (NPT) technology and is housed in an I4-PAK (ISOPLUS i4-pac) package for through-hole mounting. The device features a collector-emitter breakdown voltage of 3000 V and supports continuous collector currents up to 22 A. With a power dissipation rating of 100 W, it operates within a temperature range of -55°C to +150°C.

Feature Summary

High-voltage capability with 3000 V collector-emitter breakdown
Non-Punch-Through (NPT) silicon technology for robust performance
I4-PAK (ISOPLUS i4-pac) package design for efficient thermal management

Applications

High-voltage industrial motor drives
Uninterruptible Power Supply (UPS) systems
High-frequency induction heating equipment

Procurement Notes

Verify the specific suffix against the manufacturer's current datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original components with traceable documentation to guarantee authenticity and compliance with RoHS standards.

Selection Notes

Select this component for applications requiring high blocking voltage and moderate current handling. The I4-PAK package facilitates direct board mounting with low thermal resistance. Consider the 100 W power dissipation limit when designing heatsinking solutions for the intended operating environment.

Part Context

This part belongs to IXYS's portfolio of high-voltage discrete semiconductors designed for demanding power electronics. The NPT technology offers a balance between switching speed and forward voltage drop, making it suitable for medium-frequency switching applications where reliability under high stress is critical.