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Product Detailed Parameters
- Description：IGBT 3000V 27A ISOPLUS I4-PAC
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：5.5V @ 15V, 75A
- Power - Max：114 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXGF25N300 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 3000 V collector-emitter voltage rating and a continuous collector current of 27 A. The device utilizes the BIMOSFET technology and is housed in an I4-PAK (ISOPLUS) package. Key electrical specifications include a maximum power dissipation of 114 W, a typical saturation voltage of 3.2 V at rated conditions, and a gate-emitter voltage range of ±25 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Engineered with IXYS BIMOSFET technology for optimized switching performance.
- Designed specifically for high-voltage capacitor discharge applications.
- Provides robust thermal management capabilities through the ISOPLUS package.
Applications
- Capacitor discharge systems
- High-voltage pulsed power supplies
- Industrial welding equipment
Procurement Notes
Verify the specific datasheet revision and packaging configuration when sourcing this component. Confirm that the I4-PAK footprint matches your PCB design requirements. Ensure that the supplier provides traceability documentation consistent with IXYS manufacturing standards. Check for any specific handling instructions related to the high-voltage nature of the device.
Selection Notes
Select the IXGF25N300 when designing circuits requiring high blocking voltages up to 3000 V combined with moderate current handling. Consider its specific thermal characteristics and the requirements of capacitor discharge loads. Evaluate the trade-off between its switching speed and conduction losses against other high-voltage IGBT options available from IXYS.
Part Context
This component belongs to IXYS's portfolio of high-voltage semiconductor devices. It is distinct from standard low-voltage MOSFETs or lower-rated IGBTs due to its specialized 3 kV rating. The part is categorized under high-power discrete semiconductors intended for demanding industrial environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official IXYS resources for cross-reference information or equivalent device recommendations.
