IXGF30N400

Overview

The IXYS IXGF30N400 is a single N-channel power MOSFET designed for high-voltage switching applications. It features a breakdown voltage of 400 V and a continuous drain current of 30 A at 25°C case temperature. The device utilizes the HiPerFET technology to achieve low on-state resistance, specified at 1.6 ohms at a gate-source voltage of 10 V. Packaged in an isolated TO-247AD (TO-247-3) housing, it supports through-hole mounting with a maximum power dissipation of 280 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability suitable for demanding power conversion environments
• Integrated thermal isolation via the ISOPLUS package design
• Optimized for low conduction losses through advanced silicon planar technology

Applications

• High-frequency switch-mode power supplies
• Motor control inverters
• DC-DC converter circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing acquisition.

Selection Notes

Select this component when a 400 V rating and approximately 30 A continuous current are required in a standard through-hole form factor. Evaluate the thermal management requirements based on the 1.6 ohm on-resistance to ensure adequate heat sinking. Compare performance metrics against alternative HiPerFET series devices if lower on-resistance or different packaging options are necessary for the specific circuit topology.

Part Context

This part belongs to the IXYS HiPerFET family, which specializes in high-performance power MOSFETs. The numbering convention indicates a 400 V voltage class and a 30 A current rating. The 'G' prefix typically denotes the specific generation of the planar technology used by the manufacturer for this voltage tier.

Replacement Considerations

Direct replacements may include other 400 V, 30 A N-channel MOSFETs in the TO-247 package from the same manufacturer. Verify that substitute parts match the on-resistance, gate charge, and thermal resistance specifications. Check for any differences in the pinout configuration, particularly regarding the isolated tab connection.