ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 3000V 36A ISOPLUS I4-PAC
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：5.2V @ 15V, 100A
- Power - Max：160 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：136 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXGF36N300 is a high-voltage IGBT chip designed for demanding power conversion applications. It features a 3000 V drain-source voltage rating and a 36 A continuous collector current capability. The device operates within a junction temperature range of -55°C to +150°C and offers a power dissipation capacity of 160 W. Packaged in a 3-pin configuration with an integrated tab, this component utilizes silicon technology to ensure reliable performance in industrial environments.
Feature Summary
- Engineered as a robust discrete semiconductor device for high-voltage power control
- Utilizes silicon technology to support operation across extreme thermal conditions
- Designed specifically for capacitor discharge and specialized power conversion tasks
Applications
- Capacitor discharge systems requiring high-voltage switching
- Industrial power conversion circuits
- High-voltage power control modules
Procurement Notes
Verify the specific datasheet version and electrical characteristics directly from the manufacturer before integration. Confirm that the 3-pin tab configuration matches your thermal management design. Ensure the application environment stays within the specified voltage and current limits to maintain reliability.
Selection Notes
Select this component when a single discrete IGBT chip is required for high-voltage isolation rather than a multi-chip module. Consider the 160 W power dissipation limit and the need for appropriate heat sinking given the tab-mount package style. Evaluate the 3000 V rating against peak transient voltages in the target circuit.
Part Context
This part belongs to the IXYS discrete semiconductor product line, focusing on high-voltage transistors. It serves as a fundamental building block for power electronics, distinct from lower-voltage MOSFETs or integrated driver ICs. The component is intended for engineers designing custom power stages where discrete control is preferred.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive requirements and thermal interface materials when considering alternative high-voltage IGBT chips.
