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Product Detailed Parameters
- Description：IGBT 1000V 20A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 10A
- Power - Max：100 W
- Switching Energy：2mJ (off)
- Input Type：Standard
- Gate Charge：52 nC
- Td (on/off) @ 25°C：100ns/550ns
- Test Condition：800V, 10A, 150Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH10N100U1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1000 V collector-emitter voltage rating and a continuous collector current of 20 A at 25°C. The device utilizes the HiPerFET technology with an integrated fast recovery anti-parallel diode. It is housed in a TO-247AD-3 through-hole package, offering a power dissipation capacity of 100 W. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V and a typical switching speed suitable for high-frequency applications.
Feature Summary
- Integrates a fast recovery anti-parallel diode for efficient commutation
- Utilizes HiPerFET technology for optimized switching performance
- Features a robust TO-247AD-3 leaded package for thermal management
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Induction heating systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix 'U1' against the manufacturer's latest datasheet to confirm pinout and internal diode specifications. Ensure the procurement source provides official IXYS documentation or authorized distributor certification. Cross-reference the TO-247AD-3 package dimensions with your PCB footprint requirements before finalizing orders.
Selection Notes
Select this component for circuits requiring 1000 V blocking capability and 20 A continuous current handling. The integrated diode simplifies circuit topology compared to discrete IGBT/diode pairs. Evaluate thermal resistance requirements based on the 100 W dissipation limit and ensure adequate heatsinking for the TO-247AD package in the target application environment.
Part Context
This part belongs to the IXYS HiPerFET family of high-speed IGBTs. It is designed as a single discrete device rather than a module, targeting applications where moderate current levels and high voltage ratings are required in a standard through-hole form factor. It complements other IXYS devices like the IXGH10N170A which offers higher voltage ratings.
Replacement Considerations
The IXGH10N100AU1 is a documented alternative within the same series. Verify compatibility regarding saturation voltage and switching times when substituting.
