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The IXYS IXGH10N170 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 20 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 3.4 V under standard test conditions. With a power dissipation rating of 140 W, it operates within a junction temperature range of -55°C to +150°C. The component utilizes a TO-247AD-3 through-hole package, providing robust thermal performance and mechanical stability for industrial power electronics.
Verify the specific suffix designation against official IXYS documentation to confirm exact electrical characteristics and packaging options. Ensure compatibility with existing thermal management solutions given the 140 W dissipation rating. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before integration into regulated products.
Select this component when a 1700 V rating is required alongside moderate current handling capabilities. Compare the 3.4 V saturation voltage against alternative devices to evaluate conduction losses in the target circuit topology. Ensure the gate drive voltage aligns with the specified limits to maintain optimal switching performance and prevent device damage.
This IGBT belongs to the IXYS high-voltage discrete semiconductor portfolio, engineered for reliability in harsh electrical environments. The series is characterized by stable switching behavior and consistent thermal performance, making it a standard choice for medium-power conversion stages in industrial infrastructure.
Direct cross-replacement requires matching the 1700 V voltage class, 20 A current rating, and TO-247AD package footprint. Verify that substitute devices offer comparable saturation voltage and switching energy values to maintain system efficiency. Consult manufacturer substitution guides for validated equivalents.