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The IXGH120N30C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 75A at 25°C, with a maximum pulsed collector current of 180A. The device utilizes the GenX3 technology platform and is housed in a TO-247AD-3 package designed for through-hole mounting. It supports an operating junction temperature range from -55°C to +150°C.
Verify the specific datasheet version when sourcing, as manufacturing transitions between IXYS and Littelfuse may affect documentation availability. Confirm that the component matches the exact GenX3 specification required for your circuit design. Ensure the supplier provides authentic parts from authorized channels to guarantee reliability in high-power applications.
Select this component for designs requiring a 300V blocking capability with moderate switching speeds suitable for frequencies up to 50 kHz. The TO-247AD package facilitates efficient heat dissipation for medium-power implementations. Consider the saturation voltage characteristics relative to your efficiency targets and ensure the gate drive circuitry aligns with the standard input requirements.
This IGBT belongs to the IXGH series, which focuses on medium-speed, low Vce(sat) devices. The GenX3 family is engineered to balance conduction losses and switching losses, making it suitable for general-purpose industrial applications. The part number indicates a 300V rating and a specific current handling class within the IXYS portfolio.
Cross-reference with other IXYS GenX3 devices in the same voltage class if pin compatibility is critical. Verify that any substitute maintains the same TO-247AD footprint and electrical ratings to ensure direct interchangeability without redesigning the PCB or heatsink interface.