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Product Detailed Parameters
- Description：IGBT PT 1200V 22A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：22 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：20.4 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH12N120A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3™ technology. It features a TO-247AD-3 through-hole package with the case connected to the collector. Key electrical ratings include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 25 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.6 V and a maximum gate-emitter voltage range of -20 V to +20 V. Power dissipation is rated at 200 W, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- GenX3™ trench field-stop technology for optimized switching performance
- High short-circuit capability for robust system protection
- Square Reverse Bias Safe Operating Area (RBSOA)
- Low thermal resistance via direct solderable tab
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
- DC-DC converters
Procurement Notes
Verify the specific suffix 'A3' against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering quantity aligns with standard tube packaging configurations. Confirm RoHS compliance status if required by your assembly specifications. Cross-reference the part number with authorized distributors to avoid obsolete or counterfeit inventory.
Selection Notes
Select this component when a 1200V rating is required with moderate current handling up to 25A in a through-hole format. The GenX3 technology offers a balance between low conduction losses and fast switching speeds suitable for frequencies up to several tens of kilohertz. Compare the 2.6V saturation voltage against alternative packages to ensure thermal management requirements are met within the 200W dissipation limit.
Part Context
This IGBT belongs to the IXGH series, which utilizes IXYS's GenX3™ trench field-stop technology. This generation improves upon previous designs by offering lower saturation voltages and faster switching characteristics compared to standard planar technologies. The TO-247AD package provides a reliable mechanical connection for high-power applications requiring direct board mounting.
Replacement Considerations
Direct replacements may include the IXGH12N120A or IXGH12N120B3, provided pinouts and electrical parameters match exactly. Verify that any substitute maintains the same TO-247AD-3 footprint and collector-connected case configuration to ensure physical compatibility.
