IXGH12N60BD1

Description：IGBT 600V 24A TO-247AD
Series：HiPerFAST™

SKU:724268670773 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 24A TO-247AD
Series：HiPerFAST™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：24 A
Current - Collector Pulsed (Icm)：48 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
Power - Max：100 W
Switching Energy：500µJ (off)
Input Type：Standard
Gate Charge：32 nC
Td (on/off) @ 25°C：20ns/150ns
Test Condition：480V, 12A, 18Ohm, 15V
Reverse Recovery Time (trr)：35 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXGH12N60BD1

Overview

The IXGH12N60BD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a silicon technology construction housed in a TO-247AD-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A. It operates within a temperature range of -55°C to +150°C junction temperature. The component includes an integrated fast recovery diode, configured as a single unit with built-in diode functionality.

Feature Summary

Single IGBT configuration with integrated fast recovery diode
TO-247AD-3 through-hole mounting for robust thermal management
Silicon-based semiconductor technology

Applications

Industrial motor drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

Verify the obsolete status before procurement planning. Confirm availability through authorized distributors or secondary markets. Check RoHS compliance details via official documentation. Ensure replacement components match electrical specifications and pinout compatibility. Review datasheet revisions for any parameter updates.

Selection Notes

Select this component for applications requiring 600V blocking capability and 24A continuous current handling. The TO-247AD-3 package facilitates efficient heat dissipation for high-power density designs. Verify gate drive requirements against the specified voltage limits. Consider thermal resistance characteristics for heatsink sizing in the target application environment.

Part Context

This part belongs to the IXGH12N60 series of HiPerFAST IGBTs. It represents a discrete power switching solution designed for medium-power electronic conversion systems. The manufacturer utilizes specific trench and field-stop technologies typical of this product line to optimize switching performance and conduction losses.