IXGH15N120B

Overview

The IXYS IXGH15N120B is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C, with a peak pulsed current capacity of 90A. The device utilizes the HiPerFAST technology to achieve low saturation voltage and reduced switching losses. It is housed in an industry-standard TO-247AD-3 package, supporting through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C and includes an integrated anti-parallel fast recovery diode.

Feature Summary

• HiPerFAST technology integration for optimized switching performance and low conduction losses
• Integrated fast recovery anti-parallel diode for efficient commutation
• Standardized TO-247AD-3 package design ensuring compatibility with existing heatsink infrastructure
• Robust short-circuit capability suitable for demanding industrial environments

Applications

• AC motor speed control systems
• DC servo drives and robotic actuators
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix designation against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status as manufacturing processes evolve. Check for obsolete or not recommended for new design (NRND) status before finalizing procurement plans. Ensure sourcing channels provide authentic components with traceable documentation.

Selection Notes

Select this component for designs requiring 1200V blocking capability with moderate current handling up to 30A. The TO-247AD-3 package facilitates easy mechanical mounting via a single isolated screw. Consider thermal management requirements carefully due to the power dissipation limits inherent to the package style. Evaluate gate drive requirements to leverage the low switching loss advantages of the HiPerFAST structure.

Part Context

This IGBT belongs to the IXYS HiPerFAST family, which focuses on high-efficiency power switching solutions. The series is widely utilized in industrial power conversion where reliability and thermal performance are critical. The TO-247AD form factor represents a standard footprint in the power electronics sector, allowing for straightforward integration into existing board layouts and chassis designs.

Replacement Considerations

Direct replacements include the IXGT15N120B and IXGH15N120BD1. Verify that substitute parts maintain identical pin configurations and thermal resistance values. Ensure that any alternative devices offer comparable switching speeds and saturation voltages to preserve circuit efficiency.