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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-247AD
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 15A
- Power - Max：192 W
- Switching Energy：1.4mJ (off)
- Input Type：Standard
- Gate Charge：86 nC
- Td (on/off) @ 25°C：25ns/165ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：165 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH15N120B2D1 is a single N-channel IGBT from the HiPerFAST B2 series, manufactured by IXYS. It utilizes GenX3 technology to achieve low saturation voltage and switching losses. The device features a TO-247AD-3 package for through-hole mounting. Key electrical ratings include a collector-emitter breakdown voltage of 1200V and a continuous collector current of 15A at 25°C. The maximum power dissipation is rated at 180W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- HiPerFAST B2 technology for optimized switching performance
- Low saturation voltage for reduced conduction losses
- GenX3 trench gate structure
- Isolated mounting hole for easy installation
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status with the manufacturer. Check for obsolescence notices as older B2 series parts may have limited availability. Ensure the supplier provides genuine IXYS components with traceable documentation.
Selection Notes
Select this component for applications requiring high-voltage blocking capability with moderate current handling in a standard through-hole package. Compare total loss calculations against newer GenX3 or B3 series alternatives if higher efficiency is required. Ensure the gate drive circuit supports the specified voltage limits and switching speeds.
Part Context
This part belongs to the IXYS HiPerFAST B2 family of IGBTs. It shares the TO-247AD-3 form factor with other high-voltage devices in the lineup. The B2 designation indicates a specific generation of trench gate technology designed to balance conduction and switching losses for industrial power electronics.
Replacement Considerations
Direct substitutes include IXGH15N120B3D1 from the newer GenX3 series. Other compatible options are IXGT15N120B2D1 for surface mount requirements. Verify pin compatibility and thermal resistance before swapping.
