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The IXGH15N120BD1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a TO-247AD-3 through-hole package. The device supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 15A at 25°C. Key electrical parameters include a saturation voltage of 2.8V, a gate-emitter voltage range of -20V to +20V, and a power dissipation rating of 150W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix BD1 against official datasheets to confirm integrated diode inclusion and pinout compatibility. Ensure thermal management solutions align with the 150W dissipation rating. Confirm RoHS compliance status via manufacturer documentation before integration into regulated assemblies.
Select this component for applications requiring 1200V isolation with moderate current handling. The TO-247 package facilitates efficient heat sinking compared to surface-mount alternatives. Evaluate switching losses against system frequency requirements, as the device balances conduction and switching performance suitable for general-purpose industrial inverters.
This part belongs to the IXYS HiPerFAST IGBT family, known for optimized trade-offs between conduction loss and switching speed. The series targets medium-frequency power conversion applications where reliability and ruggedness are critical. It represents a standard discrete solution within IXYS's broader portfolio of power semiconductors.
Direct substitutes may include other 1200V/15A IGBTs in TO-247 packages from manufacturers like Infineon or Mitsubishi. Verify pin compatibility and thermal resistance values. Cross-reference switching times and saturation voltages to ensure circuit stability without redesign.