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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-247AD
- Series：Lightspeed™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.8V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.05mJ (off)
- Input Type：Standard
- Gate Charge：69 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH15N120C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3 technology. It features a TO-247AD-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C. It has a typical saturation voltage of 2.6 V and a power dissipation rating of 180 W. Operating temperatures range from -55°C to +150°C, with a gate-emitter voltage limit of ±20 V.
Feature Summary
- Utilizes IXYS GenX3 trench field-stop technology for optimized switching performance.
- Features a rugged TO-247AD-3 leaded package designed for high-power applications.
- Includes an integrated anti-parallel fast recovery diode within the module structure.
Applications
- High-frequency motor drives and servo amplifiers
- Switch-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'C' against the official datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the exact revision required for your PCB footprint. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation before finalizing procurement.
Selection Notes
Select this component when a 1200V blocking capability is required alongside moderate current handling in a standard through-hole form factor. The GenX3 technology offers a balance between low conduction losses and fast switching speeds suitable for frequencies up to several tens of kilohertz. Evaluate thermal management requirements based on the 180W dissipation rating.
Part Context
This IGBT belongs to the IXGH series, which represents IXYS's generation of high-voltage silicon devices. The series is engineered for industrial power conversion applications requiring reliable operation under high electrical stress. The TO-247AD package provides a standardized mechanical interface for heatsinking in various power electronics topologies.
Replacement Considerations
Cross-reference with IXYS IXGH15N120A3 or IXGH15N120B3D1 for potential functional equivalents within the same family. Verify that any substitute maintains identical pin configurations and thermal resistance values to ensure compatibility with existing board layouts and cooling solutions.
