IXGH16N170

Overview

The IXYS IXGH16N170 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power applications. It features a collector-emitter maximum voltage (VCEO) of 1.7 kV and a continuous collector current (Ic) of 40 A, with a rated current of 32 A at 25°C. The device utilizes a TO-247AD through-hole package, offering a power dissipation capacity of 190 W. Key electrical parameters include a collector-emitter saturation voltage of 4.2 V, a gate-emitter voltage range of ±20 V, and a leakage current of 100 nA. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• High blocking voltage capability up to 1.7 kV for robust performance in demanding environments
• Monolithic fast reverse diode integration for efficient switching operations
• International standard JEDEC TO-247 AD package ensuring compatibility with established thermal management solutions

Applications

• Industrial motor drives and control systems
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment
• Inverter circuits for renewable energy systems

Procurement Notes

Verify the specific suffix designation against official IXYS documentation to confirm exact electrical characteristics and packaging configuration. Ensure that any ordering suffixes do not alter the fundamental function or pinout unless explicitly stated in the manufacturer's datasheet. Cross-reference the component marking with the approved bill of materials to prevent substitution errors during assembly.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and significant current handling capabilities. The TO-247AD package facilitates effective heat dissipation for high-power density designs. Evaluate the thermal resistance requirements based on the 190 W power dissipation rating and ensure the PCB layout supports the necessary current paths for reliable operation under peak load conditions.

Part Context

This IGBT belongs to the IXYS High Voltage series, engineered for efficiency in power conversion. It combines MOS gate turn-on technology with high current handling, making it suitable for replacing older generation devices in industrial inverters and AC drives where reliability and low switching losses are critical design constraints.

Replacement Considerations

The IXGT16N170A serves as a surface-mount alternative within the same family, utilizing a D3PAK-3 package. Designers must account for differences in thermal impedance and mounting requirements when substituting between through-hole and SMD variants from the same manufacturer.