IXGH16N60B2D1

Overview

The IXYS IXGH16N60B2D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXGH16N60 series. It features a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. The device has a typical saturated collector-emitter voltage of 2.1 V, a maximum power dissipation of 200 W, and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Utilizes standard silicon technology for robust switching performance in medium-power applications.
• Designed with a TO-247AD-3 through-hole package to facilitate efficient thermal management via heatsink mounting.

Applications

• Industrial motor drives
• Switch-mode power supplies
• Inverter circuits

Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm that the TO-247AD-3 pinout matches the target PCB footprint. Ensure thermal interface materials are compatible with the specified maximum junction temperature limits during operation.

Selection Notes

Select this component when a 600V rating and approximately 16A continuous current capability are required. The 2.1V saturation voltage offers a balance between conduction losses and switching speed. Verify that the application's thermal design can support the 200W power dissipation rating under expected load conditions.

Part Context

This part belongs to the IXGH16N60 family of single IGBTs manufactured by IXYS. These devices are engineered for general-purpose switching applications requiring reliable performance at 600V blocking voltage levels within the TO-247AD form factor.

Replacement Considerations

Direct substitutes include IXYS models such as IXGH16N60B3D1 or IXGH16N60C3D1. Cross-manufacturer replacements must match the 600V rating, 16A current, TO-247AD-3 package, and similar electrical characteristics.