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The IXGH17N100A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes the second-generation HDMOSTM process to achieve low collector-emitter saturation voltage and high current handling capability. The device features a TO-247AD package with an isolated mounting screw hole for easy installation. Key electrical ratings include a maximum collector-emitter voltage of 1000 V, a continuous collector current of 34 A, and a gate-emitter threshold voltage maximum of 5 V. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific datasheet revision and RoHS compliance status before integration, as manufacturing processes may evolve. Confirm that the TO-247AD package dimensions match your thermal management design. Ensure the gate drive circuitry aligns with the specified voltage thresholds to prevent device damage during operation.
Select this component when designing circuits requiring robust high-voltage switching with moderate current levels. The low saturation voltage makes it suitable for applications where conduction efficiency is critical. Consider the TO-247AD package for through-hole mounting solutions that require reliable thermal dissipation via a heatsink.
This IGBT belongs to the IXGH series, which focuses on high-speed switching and low conduction losses. The part is designed for general-purpose industrial power electronics. It complements other devices in the IXYS portfolio by offering a balance between voltage rating and current capacity in a standard industry package.
Check for direct pin-compatible alternatives such as the IXGH17N100 or IXGH17N100AU1 if diode integration is needed. Verify that any substitute maintains the same voltage and current ratings to ensure system reliability without redesigning the thermal or drive circuits.