IXGH20N100

Overview

The IXGH20N100 is a high-power IGBT transistor manufactured by IXYS, designed for demanding switching applications. It features a maximum collector-emitter voltage of 1000V and a continuous collector current rating of 40A. The device supports a peak collector pulse current of 80A and is rated for 150W power dissipation. Operating within a temperature range of -55°C to 150°C junction temperature, it utilizes a MOS gate structure for simple drive requirements. The component is available in international standard packages, including JEDEC TO-268 surface mount and JEDEC TO-247 AD through-hole configurations.

Feature Summary

• High current handling capability with robust thermal performance
• MOS gate turn-on technology ensuring drive simplicity
• Available in international standard JEDEC TO-268 and TO-247 AD packages

Applications

• AC motor speed control systems
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies

Procurement Notes

Verify the specific package variant required, as the IXGH20N100 designation may correspond to different physical footprints such as TO-247 or TO-268 depending on the manufacturer's suffix codes. Confirm that the requested unit matches the exact electrical specifications of 1000V and 40A. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for RoHS compliance status if environmental regulations apply to the final assembly. Validate the operating temperature range requirements against the specified -55°C to 150°C junction limit.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities up to 1000V and substantial current handling at 40A. The choice is appropriate for applications needing efficient power switching with simplified gate drive characteristics due to the MOS input structure. Consider the available package options, such as TO-247 for through-hole mounting or TO-268 for surface mount, based on the PCB layout constraints. Evaluate the thermal management requirements to ensure the 150W power rating can be sustained under the expected duty cycle and ambient conditions.

Part Context

The IXGH20N100 belongs to the family of medium-voltage IGBTs produced by IXYS Corporation. It is engineered for high-power density applications where reliable switching at elevated voltages is critical. The device complements other high-voltage semiconductors in the portfolio, offering a balance between conduction losses and switching speeds. Its design focuses on industrial and commercial power electronics, supporting robust performance in environments subject to significant electrical stress and thermal cycling.

Replacement Considerations

The IXGT20N100 is a documented equivalent part number within the same product line, sharing identical electrical characteristics and functional descriptions. Verify pinout compatibility and package dimensions before substitution. Cross-reference datasheets to confirm matching voltage and current ratings. Ensure that any alternative components meet the same thermal and switching performance criteria.