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The IXYS IXGH20N120 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing silicon technology. It features a TO-247AD-3 through-hole package and operates with a maximum collector-emitter voltage of 1200V. The device supports a continuous collector current of 20A at 25°C, with a peak pulsed current rating of 80A. Key electrical parameters include a gate-emitter voltage range of -20V to +20V, a power dissipation capacity of 200W, and an operating temperature range from -55°C to +150°C.
Verify the specific datasheet revision and ordering suffixes directly with authorized distributors or the manufacturer. Confirm that the component meets required RoHS compliance standards for the target market. Ensure the procurement channel provides original manufacturer packaging to guarantee authenticity and traceability before finalizing orders.
Select this component when a 1200V rated single IGBT with moderate current handling is required. Compare the 20A continuous current rating against load requirements. Evaluate the TO-247AD-3 package for thermal management compatibility with the intended heatsink design and PCB layout constraints.
This part belongs to the IXYS GenX3 series of IGBTs, designed for high-efficiency power switching. The series typically combines fast switching characteristics with low conduction losses. It serves as a discrete alternative to modules in medium-power applications where cost and simplicity are prioritized over integrated protection features.
Direct replacements must match the 1200V voltage rating, TO-247AD-3 package, and similar current capabilities. Verify pinout compatibility and thermal resistance values. Cross-reference with other IXYS GenX3 variants or equivalent offerings from manufacturers like Infineon or STMicroelectronics.