IXGH20N140C3H1

IXGH20N140C3H1

  • Description:IGBT PT 1400V 42A TO-247AD
  • Series:GenX3™

SKU:930db4c40b92 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT PT 1400V 42A TO-247AD
  • Series:GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1400 V
  • Current - Collector (Ic) (Max):42 A
  • Current - Collector Pulsed (Icm):108 A
  • Vce(on) (Max) @ Vge, Ic:5V @ 15V, 20A
  • Power - Max:250 W
  • Switching Energy:1.35mJ (on), 440µJ (off)
  • Input Type:Standard
  • Gate Charge:88 nC
  • Td (on/off) @ 25°C:19ns/110ns
  • Test Condition:700V, 20A, 5Ohm, 15V
  • Reverse Recovery Time (trr):70 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

Download product information

IXGH20N140C3H1

Overview

The IXGH20N140C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 1.4 kV and a continuous collector current of 42 A at 25°C, with a peak pulsed current capacity of 108 A. It exhibits a collector-emitter saturation voltage of 4 V and a power dissipation rating of 250 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

  • Incorporates GenX3 trench gate technology for optimized switching performance.
  • Designed with an integrated fast recovery anti-parallel diode.
  • Engineered for high reliability and robust short-circuit withstand capability.

Applications

  • High-frequency power supplies
  • Industrial motor drives
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify authenticity through authorized IXYS distributors or certified agents. Request original manufacturer datasheets and test reports to confirm technical specifications. Ensure compliance with RoHS directives and check for specific environmental certifications required by your region. Confirm that the component matches the exact part number suffix to avoid functional discrepancies due to packaging or material variations.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities up to 1.4 kV. The TO-247AD-3 package facilitates efficient thermal management for moderate power levels. Consider the 4 V saturation voltage when designing for conduction loss efficiency. Evaluate the thermal resistance characteristics against your heatsinking strategy to maintain junction temperatures within the specified operational limits during continuous duty cycles.

Part Context

This IGBT belongs to the IXGH20N140 product family, which represents IXYS's portfolio of high-voltage power semiconductors. The GenX3 series is characterized by advanced trench gate structures aimed at reducing switching losses compared to previous generations. These devices are typically utilized in medium-power industrial and commercial electronics where voltage ratings exceed standard low-voltage MOSFET capabilities.

Replacement Considerations

Direct substitutes include other IXYS GenX3 devices with compatible voltage and current ratings. Cross-brand replacements must match the 1.4 kV VCEO, TO-247AD-3 footprint, and similar saturation voltage characteristics to ensure circuit compatibility without redesigning the drive or thermal management systems.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 1.4 kV.

Does this component include an integrated diode?

Yes, the IXGH20N140C3H1 includes an integrated fast recovery anti-parallel diode.

What is the recommended operating junction temperature range?

The device supports a junction temperature range from -55°C to +150°C.

IXGH20N140C3H1IXGH20N140C3H1

Click on the inquiry