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The IXGH20N140C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 1.4 kV and a continuous collector current of 42 A at 25°C, with a peak pulsed current capacity of 108 A. It exhibits a collector-emitter saturation voltage of 4 V and a power dissipation rating of 250 W. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify authenticity through authorized IXYS distributors or certified agents. Request original manufacturer datasheets and test reports to confirm technical specifications. Ensure compliance with RoHS directives and check for specific environmental certifications required by your region. Confirm that the component matches the exact part number suffix to avoid functional discrepancies due to packaging or material variations.
Select this component for applications requiring high voltage blocking capabilities up to 1.4 kV. The TO-247AD-3 package facilitates efficient thermal management for moderate power levels. Consider the 4 V saturation voltage when designing for conduction loss efficiency. Evaluate the thermal resistance characteristics against your heatsinking strategy to maintain junction temperatures within the specified operational limits during continuous duty cycles.
This IGBT belongs to the IXGH20N140 product family, which represents IXYS's portfolio of high-voltage power semiconductors. The GenX3 series is characterized by advanced trench gate structures aimed at reducing switching losses compared to previous generations. These devices are typically utilized in medium-power industrial and commercial electronics where voltage ratings exceed standard low-voltage MOSFET capabilities.
Direct substitutes include other IXYS GenX3 devices with compatible voltage and current ratings. Cross-brand replacements must match the 1.4 kV VCEO, TO-247AD-3 footprint, and similar saturation voltage characteristics to ensure circuit compatibility without redesigning the drive or thermal management systems.
The maximum collector-emitter voltage (VCEO) is rated at 1.4 kV.
Yes, the IXGH20N140C3H1 includes an integrated fast recovery anti-parallel diode.
The device supports a junction temperature range from -55°C to +150°C.