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The IXYS IXGH24N170A is a high-voltage NPT IGBT in a TO-247 package. It features a collector-emitter voltage of 1700 V and a continuous collector current of 24 A at 25°C, dropping to 16 A at 90°C. The maximum collector-emitter saturation voltage is 6.0 V at 16 A and 15 V gate drive. Total gate charge is 140 nC. Switching characteristics include a turn-on delay of 21 ns and a fall time of 40 ns at 25°C. Maximum power dissipation is 250 W at 25°C case temperature, with an operating junction temperature range from -55°C to +150°C.
Verify the specific suffix against Littelfuse documentation to confirm exact electrical tolerances or packaging variations. Confirm RoHS compliance status through official datasheets before procurement. Ensure thermal management aligns with the specified RthJC values. Validate that the intended application falls within the documented safe operating area limits.
Select this component for applications requiring 1700 V blocking capability and moderate current handling up to 24 A. Consider the TO-247 package for through-hole mounting and robust heat sinking. Evaluate the 6.0 V saturation voltage against system efficiency targets. Verify that the gate drive circuitry can supply the required 15 V swing and manage the 140 nC total gate charge effectively.
This device belongs to the IXYS high-voltage IGBT family utilizing Non-Punch-Through (NPT) technology. It is designed for industrial power conversion systems where high voltage isolation and reliable switching are critical. The TO-247 package provides a standardized footprint for easy integration into existing power modules and discrete designs.
The IXGT24N170A is the surface-mount equivalent in a TO-268 package. When substituting, verify pinout compatibility and thermal resistance differences between TO-247 and TO-268 packages. Ensure the replacement part meets the same 1700 V and 24 A ratings.
The device can withstand a short circuit for 10 μs at a junction temperature of 125°C, with a collector-emitter voltage of 1200 V and a gate resistance of 22 Ω.
The device features a square RBSOA, allowing operation up to 50 A at 125°C junction temperature with a gate resistance of 10 Ω and a dv/dt less than 10 V/ns.
The collector-emitter saturation voltage increases with junction temperature. At 125°C, the maximum VCE(sat) rises to 4.8 V under standard test conditions compared to the 25°C rating.