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The IXYS IXGH24N60AU1 is a HiPerFAST IGBT with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It utilizes the 2nd generation HDMOS process to achieve low VCE(sat) for minimal conduction losses and MOS gate turn-on for drive simplicity. The device features soft recovery characteristics with low IRM in its FRED component. It is available in JEDEC TO-247 SMD surface mountable and TO-247 AD packages, offering space savings by combining two devices in one package.
Verify the specific package variant required during procurement: TO-247 AD or TO-247 SMD. Confirm that the selected part number matches the exact suffix corresponding to the desired physical footprint. Ensure compatibility with standard JEDEC mounting dimensions before finalizing orders.
Select this component for applications requiring combined switching and freewheeling functions within a compact form factor. Consider the thermal resistance values and maximum junction temperature limits when designing heat dissipation solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.
This component belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It represents a combination of high-frequency IGBT technology with a complementary fast recovery diode. The series is designed to reduce assembly time and cost while providing efficient power switching capabilities for industrial and consumer electronics.
Direct substitutes include the IXSH24N60BD1. Verify pinout compatibility and electrical parameters such as VCE(sat) and switching times before implementing any alternative components in existing designs.