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The IXYS IXGH24N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST™ C4 series. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 56A at 25°C, with a maximum pulsed current of 112A. The device exhibits a low saturation voltage of 2.28V at 25A and utilizes a TO-247AD-3 through-hole package. Designed for high-efficiency switching, it supports junction temperatures up to 150°C and incorporates soft recovery characteristics to minimize switching losses in power conversion applications.
Verify the specific suffix CD1 against the manufacturer's latest datasheet to confirm pinout compatibility and thermal resistance values. Ensure the component meets RoHS directives if required by the target assembly process. Cross-reference the part number with authorized distributors to confirm current production status and availability before finalizing procurement plans.
Select this IGBT for designs requiring moderate current handling with low conduction losses. Evaluate the thermal management requirements based on the specified saturation voltage and power dissipation limits. Consider the gate charge characteristics when designing the driver circuitry to ensure optimal switching speed and efficiency within the operating temperature range.
This component is part of IXYS' HiPerFAST™ C4 family, which represents an evolution in trench gate IGBT technology. The series focuses on improving efficiency in medium-power applications compared to previous generations. The IXGH24N60CD1 specifically targets applications where compact packaging and reliable performance under high thermal stress are critical design constraints.
Direct substitutes include the IXGH24N60C4. Verify electrical parameters such as Vce(sat) and switching times against the original design specifications before implementing any alternative components from different manufacturers.