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Product Detailed Parameters
- Description：IGBT 1000V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：5mJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH25N100A is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing the 2nd generation HDMOSTM process. It features a TO-247AD package with a collector-emitter voltage rating of 1000 V and a continuous collector current of 50 A at 25°C, decreasing to 25 A at 90°C. The device has a maximum collector-emitter saturation voltage of 4.0 V at IC90 with a gate drive of 15 V. It supports a junction temperature range from -55°C to +150°C and offers a short-circuit withstand capability of 100 A for 1 ms.
Feature Summary
- High-speed switching performance optimized for demanding power conversion applications
- Robust short-circuit safe operating area (RBSOA) handling up to 100 A for 1 ms
- Voltage rating guaranteed at elevated temperatures up to 125°C
- Simple MOS gate drive requiring low control power
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix 'A' against official datasheets to confirm the high-speed variant characteristics, as it differs electrically from the standard version. Confirm package type matches the required thermal management solution. Check RoHS compliance status via manufacturer documentation before integration.
Selection Notes
Select this component when high blocking voltage and fast switching are critical. Ensure the gate driver can supply sufficient peak current to manage the total gate charge of 180 nC. Verify that the system's thermal design accommodates the specified on-state saturation voltage to maintain junction temperatures within the 150°C limit during operation.
Part Context
This IGBT belongs to the IXGH/IXGM 25N100 series manufactured by IXYS. It represents a specialized high-speed variant distinguished by its switching parameters compared to the lower saturation voltage counterpart. The device is designed for through-hole mounting in industrial power electronics environments.
Replacement Considerations
The IXGH25N100 serves as the direct replacement for the IXGH25N100A in designs where slightly faster turn-off times are not strictly required. Both share identical pinouts and mechanical dimensions.
