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Product Detailed Parameters
- Description：IGBT PT 1200V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 28A
- Power - Max：250 W
- Switching Energy：2.2mJ (off)
- Input Type：Standard
- Gate Charge：92 nC
- Td (on/off) @ 25°C：30ns/210ns
- Test Condition：960V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH28N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and is housed in a TO-247AD-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 1200V and a continuous collector current of 28A at 25°C. Key electrical parameters include a saturation voltage of 2.6V, a gate-emitter leakage current of 100nA, and a power dissipation rating of 300W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Incorporates GenX3 technology for optimized switching performance.
- Features a built-in fast recovery anti-parallel diode.
- Designed for high-voltage applications with robust thermal stability.
Applications
- High-frequency induction heating systems
- Switch-mode power supplies
- Motor control drives
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and internal diode configuration. Ensure the supplier provides traceable documentation matching the IXYS manufacturing standards. Cross-reference the component marking with the manufacturer's latest release notes to avoid counterfeit or obsolete variants during acquisition.
Selection Notes
Select this component when a 1200V blocking capability is required alongside moderate current handling. The TO-247AD-3 package facilitates efficient heat sinking for high-power density designs. Consider the trade-off between the 2.6V saturation voltage and switching losses relative to the application's frequency requirements.
Part Context
This IGBT belongs to the IXGH series, which integrates fast recovery diodes for use in bridge configurations. The GenX3 platform represents IXYS' advanced silicon technology aimed at reducing conduction and switching losses compared to previous generations.
Replacement Considerations
Direct substitutes may include other IXYS GenX3 devices with similar voltage and current ratings. Verify pin compatibility and thermal characteristics before substituting with components from different manufacturers.
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage is 1200V.
Does this component include an integrated diode?
Yes, it includes a built-in fast recovery anti-parallel diode.
What is the recommended operating temperature range?
The minimum operating temperature is -55°C and the maximum is +150°C.
