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The IXYS IXGH28N60BD1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, designed for high-power switching applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 28 A at 25°C. The device utilizes a TO-247AD-3 through-hole package with an electrically isolated collector tab. Key electrical characteristics include a maximum saturated collector-emitter voltage of 2.1 V at 28 A and a typical fall time of 180 ns under standard test conditions.
Verify component authenticity upon receipt as this part number may be subject to obsolescence or discontinuation notices. Confirm that the received package matches the specified TO-247AD-3 form factor and pinout configuration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent internal damage during soldering processes.
Select this component when a 600 V blocking capability and approximately 28 A continuous current are required in a through-hole configuration. The specific 2.1 V saturation voltage and 180 ns fall time define its efficiency and thermal profile compared to other IGBTs in the same voltage class. Evaluate thermal resistance parameters against the intended heatsink design to ensure junction temperature limits are not exceeded during operation.
This device belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. These components are engineered for medium-to-high frequency power conversion, balancing conduction losses with switching speed. The TO-247AD package provides a robust mechanical interface suitable for industrial environments requiring reliable thermal dissipation and secure mounting.
Direct substitutes include the IXYS IXGH28N60B3D1. Cross-manufacturer replacements such as the STMicroelectronics STGW20H65FB may require verification of pin compatibility and electrical parameter alignment.