IXGH28N90B

IXGH28N90B

  • Description:IGBT 900V 51A TO-247AD
  • Series:HiPerFAST™

SKU:6ed22b9b9146 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 900V 51A TO-247AD
  • Series:HiPerFAST™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):900 V
  • Current - Collector (Ic) (Max):51 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 28A
  • Power - Max:200 W
  • Switching Energy:1.2mJ (off)
  • Input Type:Standard
  • Gate Charge:100 nC
  • Td (on/off) @ 25°C:30ns/100ns
  • Test Condition:720V, 28A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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IXGH28N90B

Overview

The IXYS IXGH28N90B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST series. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current rating of 28 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of approximately 2.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 250 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • HiPerFAST technology for optimized switching performance
  • Soft recovery fast freewheeling diode integration
  • Low saturation voltage for reduced conduction losses

Applications

  • High-frequency motor drives
  • Switched-mode power supplies
  • Induction heating systems

Procurement Notes

Verify the specific datasheet revision and ordering suffixes with authorized distributors or the manufacturer to ensure compliance with current RoHS directives and material declarations. Confirm that the TO-247AD-3 package dimensions match the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a 900V blocking capability is required alongside moderate current handling around 28A. The integrated fast diode makes it suitable for half-bridge configurations where reverse recovery characteristics are critical. Ensure thermal management solutions can handle the specified 250W power dissipation under worst-case operating conditions.

Part Context

This IGBT belongs to the IXYS HiPerFAST family, designed for medium-power applications requiring high efficiency. It complements other devices in the IXGH series by offering a balance between voltage rating and current density. The TO-247AD-3 package provides robust mechanical stability for industrial environments.

Replacement Considerations

Direct substitutes may include other 900V, 28A HiPerFAST IGBTs from IXYS or equivalent offerings from manufacturers like Infineon or Mitsubishi, provided pinouts and thermal characteristics align.

IXGH28N90BIXGH28N90B

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