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The IXYS IXGH28N90B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST series. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current rating of 28 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of approximately 2.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 250 W. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific datasheet revision and ordering suffixes with authorized distributors or the manufacturer to ensure compliance with current RoHS directives and material declarations. Confirm that the TO-247AD-3 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Select this component when a 900V blocking capability is required alongside moderate current handling around 28A. The integrated fast diode makes it suitable for half-bridge configurations where reverse recovery characteristics are critical. Ensure thermal management solutions can handle the specified 250W power dissipation under worst-case operating conditions.
This IGBT belongs to the IXYS HiPerFAST family, designed for medium-power applications requiring high efficiency. It complements other devices in the IXGH series by offering a balance between voltage rating and current density. The TO-247AD-3 package provides robust mechanical stability for industrial environments.
Direct substitutes may include other 900V, 28A HiPerFAST IGBTs from IXYS or equivalent offerings from manufacturers like Infineon or Mitsubishi, provided pinouts and thermal characteristics align.