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The IXGH2N250 is a single NPT silicon IGBT manufactured by IXYS, housed in a TO-247AD through-hole package. It features a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 5.5 A at 25°C. The device has a maximum power dissipation of 32 W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate-emitter voltage limit of ±20 V, a collector-emitter saturation voltage of 3.1 V, and a gate-emitter leakage current of 100 nA.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific lot matches the required voltage and current ratings for your circuit design. Ensure proper handling procedures are followed due to the sensitivity of semiconductor devices to electrostatic discharge during installation.
Select this component when a 2500 V blocking voltage is required with moderate current handling capabilities. The TO-247AD package facilitates effective heat dissipation for continuous operation. Consider the 3.1 V saturation voltage for efficiency calculations in low-to-medium power switching scenarios where high-voltage isolation is critical.
This part belongs to IXYS's discrete IGBT portfolio, specifically designed for high-voltage applications. It complements other series like the IXYX and MMIX families by offering a standard through-hole solution for single switches rather than integrated modules or higher-current variants.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs if cross-referencing with other manufacturers' 2500 V IGBTs based on pinout and electrical specifications.
The maximum collector-emitter breakdown voltage is 2500 V.
No, it is designed for through-hole mounting in the TO-247AD package.