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Product Detailed Parameters
- Description：IGBT 600V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 30A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH30N60A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247AD flange-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25°C. The device incorporates XPT technology to achieve low conduction losses and includes a built-in fast recovery anti-parallel diode. Designed for high-efficiency switching applications, it supports a maximum junction temperature of 175°C.
Feature Summary
- XPT technology integration for optimized trade-off between conduction and switching losses
- Built-in fast recovery anti-parallel diode for simplified circuit design
- Flange-mount construction with collector connected to the case for efficient thermal dissipation
Applications
- High-frequency motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix against the manufacturer's latest datasheet to confirm exact electrical characteristics and pinout compatibility. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability before integration into production designs.
Selection Notes
Select this component when a robust single IGBT with an integrated diode is required for medium-power applications. The TO-247AD package facilitates direct mounting to heatsinks. Evaluate thermal management requirements based on the specified power dissipation limits and ambient operating conditions.
Part Context
This part belongs to the IXYS IXGH series of high-performance IGBTs. The series utilizes advanced silicon planar gate technology to deliver superior switching performance and ruggedness compared to standard IGBTs, making it suitable for demanding industrial and consumer electronics environments.
Replacement Considerations
Cross-reference with IXYS IXGH30N60BD1 or IXGH30N60B2D1 for updated variants within the same family. Verify that substitute parts maintain identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility.
