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The IXGH30N60B2D1 is a HiPerFAST IGBT with an integrated diode manufactured by IXYS. It features a TO-247AD package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 30 A at 25°C, with a peak pulsed current capacity of 90 A. Key electrical parameters include a saturation voltage of 1.8 V at 30 A and a gate-emitter threshold voltage ranging from 3 V to 5 V. Maximum ratings encompass a gate-emitter voltage of ±20 V and a power dissipation of 270 W. The component is designed for high-speed switching applications within a junction temperature range of -55°C to +175°C.
Verify the specific suffix B2 against official datasheets to confirm parameter alignment, as variations exist within the IXGH series. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure sourcing channels provide authentic components to avoid counterfeit risks associated with high-power semiconductors.
Select this component when a 600V rating and 30A continuous current are required in a TO-247AD form factor. Compare the 1.8V saturation voltage against alternative devices to evaluate conduction losses. Consider the thermal resistance characteristics of the flange mount design for heatsink compatibility in dense packaging environments.
This part belongs to the IXYS HiPerFAST family, which utilizes advanced trench gate technology to balance low conduction losses with rapid switching speeds. The series is widely recognized for reliability in industrial power conversion applications requiring robust performance under high stress conditions.
Direct substitutes may include other IXYS HiPerFAST variants with matching voltage and current ratings. Cross-brand replacements require verification of pinout compatibility, thermal resistance values, and switching energy parameters to ensure circuit functionality remains unaffected.