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The IXYS IXGH30N60C2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST C2-Class series. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package with a flange mount configuration. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter threshold voltage maximum of 5 V, and a maximum fall time of 190 ns. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'C2' against official IXYS documentation to confirm it denotes the C2-Class high-speed variant rather than other revisions. Check for End-of-Life status or discontinuation notices from Littelfuse/IXYS, as older HiPerFAST models may be phased out. Confirm RoHS compliance details directly from the manufacturer's datasheet before procurement.
Select this component when designing circuits requiring high-frequency switching capabilities combined with robust current handling. Ensure the thermal management solution supports the specified junction temperature limits up to 150°C. Verify that the gate drive circuitry aligns with the MOS gate requirements and the 1.8 V saturation voltage characteristics for optimal efficiency.
This part belongs to the IXYS HiPerFAST family, specifically the C2-Class segment designed for high-speed applications. It serves as a discrete semiconductor switch within power electronics systems. The TO-247AD package provides a standardized form factor for through-hole mounting on printed circuit boards, facilitating integration into industrial and consumer power conversion designs.
Direct substitutes include the IXGH30N60B2D1 and IXGH30N60BD1. Alternative options from other manufacturers include the FGH40N60SMD-F085 by onsemi and the STGW40H65FB by STMicroelectronics. Verify pinout compatibility and electrical parameter overlaps before substitution.