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The IXYS IXGH30N60C2D1 is a single Insulated Gate Bipolar Transistor (IGBT) from the Lightspeed 2 series, housed in a TO-247AD package. It features an electrically isolated back surface for direct heatsink mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a typical saturation voltage of 2.1 V and a gate charge of 85 nC. It operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm technical specifications. Ensure proper handling procedures are followed due to electrostatic sensitivity. Confirm that the specific ordering suffix matches the required isolation and packaging variants.
Select this component for designs requiring galvanic isolation between the collector and the mounting base. Compare the 600V rating and 30A current capacity against circuit load requirements. Evaluate thermal management needs based on the specified power dissipation limits. Consider the switching frequency capabilities relative to the application's efficiency targets.
This IGBT belongs to the IXYS Lightspeed 2 series, which utilizes advanced HDMOSTM process technology. The series is designed for high-power density applications requiring fast switching speeds. The TO-247AD package provides a robust mechanical structure suitable for through-hole mounting in industrial environments.
Direct substitutes may include other 600V isolated IGBTs in TO-247AD packages with similar current ratings. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with IXYS GenX3 or HiPerFAST series components if electrical parameters align.