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Product Detailed Parameters
- Description：IGBT PT 600V 60A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
- Power - Max：220 W
- Switching Energy：120µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：38 nC
- Td (on/off) @ 25°C：17ns/42ns
- Test Condition：300V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH30N60C3C1 is a GenX3 SiC IGBT manufactured by IXYS. It features a 600V collector-emitter voltage rating and a 30A continuous collector current at 25°C. The device utilizes Silicon Carbide technology within a TO-247AD-3 package. It operates within a junction temperature range of -55°C to +175°C. The component is part of the G-Series GenX3SiC lineup, designed for high-efficiency switching applications.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for enhanced thermal performance
- Part of the GenX3 product series for optimized switching characteristics
- Designed for high-temperature operation up to 175°C
Applications
- High-frequency power conversion systems
- Industrial motor drives requiring low switching losses
- Uninterruptible power supplies (UPS)
- High-efficiency DC-DC converters
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Distribution channels indicate it is discontinued and no longer in active production. Verification of availability should focus on remaining stock from authorized distributors or secondary market suppliers rather than direct factory orders.
Selection Notes
Engineers selecting this part must account for its discontinuation status when designing new products. The SiC technology offers superior thermal conductivity compared to standard silicon alternatives. Designers should verify that the TO-247AD-3 package footprint matches their existing PCB layout constraints before finalizing the bill of materials.
Part Context
The IXGH30N60C3C1 belongs to IXYS's GenX3SiC family, which integrates Silicon Carbide MOSFETs with IGBTs. This specific model represents a 600V class device aimed at reducing conduction and switching losses. It serves as a specialized component for applications demanding higher efficiency and thermal stability than conventional silicon IGBTs can provide.
Replacement Considerations
As an EOL component, direct replacements may be limited. Engineers should evaluate newer IXYS SiC modules or comparable 600V SiC IGBTs from other manufacturers. Cross-referencing datasheets for pin compatibility and thermal resistance is essential when substituting this discontinued part.
