IXGH32N170

Overview

The IXYS IXGH32N170 is a single silicon Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a collector-emitter breakdown voltage of 1.7 kV and supports a continuous collector current of 32 A at 25°C, with a maximum pulsed current capacity of 96 A. The device utilizes a TO-247AD-3 through-hole package, enabling a power dissipation rating of 300 W. It operates within a junction temperature range of -55°C to +150°C and maintains a low collector-emitter saturation voltage of 2.35 V under standard test conditions.

Feature Summary

• High-voltage capability suitable for demanding industrial power conversion environments
• Robust thermal management through a standardized through-hole mounting configuration
• Optimized on-state characteristics for efficient energy handling in high-current circuits

Applications

• Industrial motor drive inverters
• Uninterruptible power supply (UPS) systems
• High-frequency welding equipment

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with authorized distributors or the manufacturer before procurement. Confirm that the ordering suffix matches the required pinout and packaging specifications for your assembly process. Ensure all regulatory documentation is current for your target market.

Selection Notes

Select this component when designing circuits requiring 1.7 kV blocking voltage and sustained currents up to 32 A. Evaluate the thermal resistance of the TO-247AD-3 package against your heatsink capabilities to ensure the junction temperature remains within the specified operational limits during peak load conditions.

Part Context

This IGBT belongs to the IXGH series from IXYS, which focuses on medium-to-high power discrete transistors. The series provides reliable performance for general-purpose industrial applications, offering a balance between switching speed and conduction losses in standard silicon technology implementations.

Replacement Considerations

Direct substitutes include other 1.7 kV, 32 A IGBTs in the TO-247AD-3 package. Verify pin compatibility and electrical parameters such as saturation voltage and switching times before implementing any cross-brand replacements.