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Product Detailed Parameters
- Description：IGBT NPT 1700V 32A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：5V @ 15V, 21A
- Power - Max：350 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：155 nC
- Td (on/off) @ 25°C：46ns/260ns
- Test Condition：850V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH32N170A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a collector-emax voltage of 1700 V and a continuous collector current rating of 32 A at 25°C, with a maximum pulsed current capacity of 110 A. The device is housed in a TO-247AD through-hole package, offering a power dissipation capability of 350 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- High current handling capability suitable for demanding power electronics
- Simplified gate drive requirements due to MOS gate architecture
- Compliance with international standard JEDEC TO-247 AD packaging
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- High-frequency power supplies and welding equipment
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's latest datasheet to confirm exact electrical tolerances and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity and traceability. Confirm that the TO-247AD package dimensions match the target PCB layout requirements before finalizing orders.
Selection Notes
Select this component when a 1700 V blocking voltage and 32 A continuous current are required in a through-hole configuration. Compare the 350 W power dissipation rating against the system's thermal management capabilities. Consider the 110 A pulsed current limit for transient load conditions. Evaluate the gate drive simplicity benefits against alternative IGBT technologies for circuit design efficiency.
Part Context
This part belongs to the IXYS High Voltage IGBT series, utilizing Silicon technology for robust performance. It is categorized under discrete semiconductor power transistors. The product line targets industrial applications requiring reliable high-power switching. The TO-247AD package facilitates efficient heat sinking and mechanical mounting in various power electronic assemblies.
Replacement Considerations
The IXGH16N170A is a related series member but offers lower current ratings. Verify pinout compatibility and thermal resistance differences when considering substitutes. No direct public substitute part numbers are confirmed for this specific model.
