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Product Detailed Parameters
- Description：IGBT PT 900V 64A TO-247AD
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：64 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 32A
- Power - Max：300 W
- Switching Energy：2.6mJ (off)
- Input Type：Standard
- Gate Charge：89 nC
- Td (on/off) @ 25°C：20ns/260ns
- Test Condition：720V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH32N90B2 is a single Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST B2 series, manufactured by IXYS. It utilizes Silicon technology and features a TO-247AD-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 900 V and a continuous collector current of 64 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.0 V and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- High-speed switching performance characteristic of the HiPerFAST B2 class
- Soft recovery fast ultrafast diode integrated in the module structure
- Designed for high reliability in hard-switching applications
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor control drives
Procurement Notes
Verify component authenticity against official IXYS or Littelfuse documentation. Confirm RoHS compliance status via the manufacturer's latest datasheet. Ensure the TO-247AD-3 package matches the design footprint. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.
Selection Notes
Select this component for applications requiring 900V blocking capability and moderate current handling up to 64A. The B2-class technology offers optimized trade-offs between conduction losses and switching speed. Consider thermal management solutions capable of dissipating 300W under specified operating conditions. Validate gate drive compatibility with standard IGBT driving voltages.
Part Context
This part belongs to the HiPerFAST family, representing IXYS' advanced IGBT technology. The 'B2' designation indicates a specific generation focused on improved switching characteristics compared to earlier PT-based devices. It serves as a discrete solution for medium-power conversion tasks where efficiency and switching frequency are critical design constraints.
Replacement Considerations
Direct substitutes may include other IXYS HiPerFAST B2 series devices with matching voltage and current ratings, such as the IXGH50N90B2D1 for higher current capacity. Cross-brand replacements require careful verification of pinout compatibility, thermal resistance, and switching times to ensure circuit performance integrity.
