IXGH32N90B2D1

Overview

The IXGH32N90B2D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, manufactured by IXYS. It utilizes NPT technology and is housed in a TO-247AD-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current of 32 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability with 900 V collector-emitter breakdown voltage
• Optimized switching performance using Non-Punch-Through (NPT) technology
• Robust thermal management with 300 W power dissipation rating
• Standardized TO-247AD-3 through-hole packaging for reliable integration

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment
• Switch-mode power supplies (SMPS)

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm RoHS compliance status via the manufacturer's datasheet. Ensure ordering suffixes match specific package or testing requirements. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Validate technical specifications against the latest published datasheets prior to final design approval.

Selection Notes

Select this IGBT for applications requiring high blocking voltage and moderate current handling. Compare saturation voltage and switching energy losses against alternative devices in the same voltage class. Evaluate thermal resistance values to ensure adequate heat sinking solutions are available. Verify that the gate drive circuitry supports the required voltage levels and current capabilities for optimal switching performance.

Part Context

This component belongs to the IXYS HiPerFAST family, designed for efficient power conversion. It complements other IXGH series devices offering varying current ratings at similar voltage levels. The TO-247AD-3 package provides a standard footprint for industrial power electronics. It serves as a core switching element in medium-power inverter topologies.

Replacement Considerations

Direct substitutes may include other IXYS HiPerFAST IGBTs with matching 900V ratings and comparable current capacities. Verify pinout compatibility and thermal characteristics when considering cross-manufacturer alternatives. Ensure replacement devices meet the same safety and regulatory standards required for the original design.