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The IXYS IXGH35N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 70 A at 25°C. The device is housed in a TO-247AD-3 package with through-hole mounting. Key electrical parameters include a gate-emitter threshold voltage ranging from 3 V to 6 V, a maximum gate-emitter voltage of ±20 V, and a typical saturation voltage of 2.8 V at 70 A. It operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AD-3 package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Select this component when a 1200V rating and high current capacity are required in a standard through-hole package. Compare the saturation voltage and switching times against alternative IGBTs to ensure compatibility with the driver circuitry. Verify that the short-circuit withstand capability meets the protection requirements of the specific power electronics design.
This part belongs to the IXYS IXGH series of high-speed IGBTs. These devices are designed for medium to high-power applications requiring fast switching speeds. The series typically includes integrated freewheeling diodes, making them suitable for bridge configurations in inverters and choppers without needing external diode components.
Potential substitutes include the IXGH25N120A or IXGP20N120B, though these offer lower current ratings. For direct pin-compatible replacements with similar specifications, check the IXYS IXGH35N120BD1 variant which explicitly includes an integrated diode. Always verify electrical parameters and thermal characteristics before substitution.