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Product Detailed Parameters
- Description：IGBT PT 600V 92A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：92 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 30A
- Power - Max：250 W
- Switching Energy：540µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：19ns/125ns
- Test Condition：400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH36N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 92 A at 25°C. Its collector-emitter saturation voltage is rated at 1.8 V, with a power dissipation capacity of 250 W. The gate-emitter voltage range spans from -20 V to +20 V. Operating temperatures extend from -55°C to +150°C.
Feature Summary
- GenX3 technology for medium-speed switching applications
- Low saturation voltage design for efficiency
- Through-hole mounting for robust integration
Applications
- Induction heating systems
- Switch-mode power supplies
- Motor control drives
Procurement Notes
Verify component authenticity against official IXYS documentation before integration. Confirm RoHS compliance status via manufacturer datasheets. Ensure thermal management aligns with the 250 W dissipation rating. Validate package dimensions match the TO-247AD-3 specification. Check for any specific handling requirements during assembly.
Selection Notes
Select this IGBT for circuits requiring 600V blocking capability and high current handling up to 92A. Consider the 1.8V saturation voltage for conduction loss optimization. Ensure the driving circuit supports the specified ±20V gate-emitter limits. Verify that the operating environment stays within the -55°C to +150°C temperature range for reliable performance.
Part Context
This component belongs to the IXGH36N60 series, which includes variants like IXGH36N60A3D4. These devices are part of IXYS's portfolio of medium-speed PT IGBTs designed for frequencies between 5 kHz and 40 kHz. The series emphasizes low saturation voltage characteristics suitable for various industrial power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using electrical parameters such as VCEO, IC, and VCE(sat). Package compatibility must be verified if considering alternative manufacturers.
