IXGH36N60B3D4

Overview

The IXGH36N60B3D4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It features a TO-247AD-3 through-hole package and utilizes silicon technology. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 36 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 250 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology for optimized switching performance
• Soft recovery fast diode integration
• Low saturation voltage characteristics

Applications

• Motor drives
• Switched-mode power supplies
• High-frequency inverters

Procurement Notes

Verify the specific suffix D4 against official datasheets to confirm pinout and internal diode configuration differences compared to standard variants. Ensure component authenticity through authorized channels to avoid counterfeit risks. Check RoHS compliance status as required by regional regulations before procurement.

Selection Notes

Select this component for applications requiring medium-speed switching with low conduction losses. Compare the 36 A current rating and 600 V blocking capability against circuit requirements. Evaluate thermal management needs based on the 250 W power dissipation limit in the TO-247AD-3 package.

Part Context

This part belongs to the IXYS GenX3 family of IGBTs, designed for high-efficiency power conversion. The GenX3 technology combines fast soft-switching diodes with low Vce(sat) transistors. It serves as an upgrade over older generations, offering improved reliability and reduced switching losses in industrial power electronics.

Replacement Considerations

Direct replacements may include other IXYS GenX3 devices with similar ratings, such as the IXGH36N60B3. Verify pin compatibility and thermal resistance values when substituting.