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Product Detailed Parameters
- Description：IGBT 600V 76A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：76 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 38A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH38N60U1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes the second-generation HDMOSTM process technology to achieve low collector-emitter saturation voltage. The device is housed in an international standard JEDEC TO-247AD package, designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 76 A. The component supports a power dissipation of 200 W and operates within a temperature range from -55°C to +150°C.
Feature Summary
- Integrates IGBT and anti-parallel Fast Recovery Epitaxial Diode (FRED) in a single package
- Utilizes second-generation HDMOSTM process technology for optimized performance
- Features low collector-emitter saturation voltage characteristics
Applications
- Motor control drives
- Power supply units
- Induction heating systems
Procurement Notes
Verify the manufacturer source carefully, as IXYS has been acquired by Littelfuse. Confirm that the specific part number matches the required technical specifications, particularly the 600V rating and TO-247AD package type. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference datasheets from authorized distributors to confirm current production status and availability constraints.
Selection Notes
Select this component when a combined IGBT and freewheeling diode solution is required in a standard TO-247AD footprint. The 600V rating makes it suitable for medium-voltage applications. Consider the 76A continuous current capability and 200W power dissipation limits against your thermal management design. The integrated FRED diode simplifies circuit topology compared to discrete solutions.
Part Context
This component belongs to the IXYS IGBT portfolio, specifically utilizing the HDMOSTM process. It is categorized as a single IGBT device. The TO-247AD package is an industry-standard form factor widely used in power electronics for its robust mechanical mounting and thermal performance capabilities.
Replacement Considerations
Direct substitutes must match the 600V voltage rating, 76A current capacity, and TO-247AD package. Verify pinout compatibility and thermal resistance parameters. Check for equivalent integrated FRED diode specifications if the freewheeling function is critical to the application design.
