IXGH40N120C3

Overview

The IXGH40N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 75 A at 25°C, with a peak pulsed current rating of 180 A. The saturation voltage (VCE(sat)) is specified at 4.4 V. Maximum power dissipation (Pd) reaches 380 W, and the operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Incorporates IXYS GenX3 trench gate technology for optimized switching performance.
• Designed with a square Reverse Bias Safe Operating Area (RBSOA) for enhanced ruggedness.
• Features a standard gate input configuration compatible with common drive circuits.

Applications

• High-frequency induction heating systems
• Switch-mode power supplies (SMPS)
• Motor control drives

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required electrical parameters, as variations may exist within the product line. Ensure compliance with RoHS directives if applicable to the target assembly. Cross-reference datasheet revisions to validate current manufacturing status and any potential design changes.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 1200V. The 75A continuous current rating suits moderate to high-power industrial loads. Evaluate thermal management requirements based on the 380W power dissipation limit. Consider the 4.4V saturation voltage when calculating conduction losses in the final circuit design.

Part Context

This part belongs to the IXGH40N120 series of discrete IGBTs. It represents a silicon-based power semiconductor solution designed for robust operation in demanding electronic environments. The TO-247AD-3 package provides mechanical stability and efficient heat transfer capabilities suitable for board-mounted implementations.

Replacement Considerations

Direct substitutes include the IXGH40N120C3D1. Verify pinout compatibility and thermal resistance specifications when evaluating alternative sources or updated revisions from the manufacturer.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 1.2 kV.

Does the device support reverse bias safe operating area (RBSOA)?

Yes, the device is characterized with a square Reverse Bias Safe Operating Area (RBSOA).

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.