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The IXYS IXGH40N60 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing the second-generation HDMOS process. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 75 A at 25°C, dropping to 40 A at 90°C. The device has a maximum saturation voltage of 2.5 V at 15 V gate drive and 40 A collector current. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 250 W of power in a TO-247AD package.
Verify component authenticity by checking for official IXYS markings and datasheet alignment. Confirm package type matches TO-247AD specifications. Ensure storage conditions prevent moisture damage prior to soldering. Validate that replacement parts meet identical electrical parameters if sourcing alternatives.
Select this component for applications requiring high efficiency and simplified gate driving. Consider thermal management capabilities when designing heat sinks. Evaluate switching energy losses against specific circuit frequencies. Ensure gate drive voltage aligns with the 15 V standard for optimal performance.
This IGBT belongs to the IXGH/IXGM 40N60 series from IXYS Corporation. It represents a legacy product line designed for general-purpose power switching. The series utilizes international standard packages for ease of integration into existing industrial designs.
Direct substitutes include IXYS models such as IXGH40N60A or IXGM40N60. Cross-manufacturer equivalents must match the 600V rating, 75A current capacity, and TO-247AD footprint. Verify pinout compatibility before implementation.