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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-247AD
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：400µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：18ns/130ns
- Test Condition：400V, 30A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH40N60B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 250 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- High-voltage switching capability with 600 V collector-emitter breakdown rating
- Robust thermal performance supporting up to 250 W power dissipation
- Low saturation voltage for efficient conduction in high-current applications
Applications
- Industrial motor drives and inverters
- Switch-mode power supplies (SMPS)
- Welding equipment power stages
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and packaging variations. Check RoHS compliance status directly from manufacturer documentation. Confirm availability through authorized distributors as lead times may vary. Ensure ordering quantities match standard tube packaging configurations provided by the supplier.
Selection Notes
Select this component for circuits requiring 600 V blocking voltage and 75 A continuous current handling. Compare the 2.5 V saturation voltage against system efficiency requirements. Ensure the TO-247AD-3 package fits the PCB layout and thermal management design. Verify gate drive compatibility with the specified 20 V maximum gate-emitter voltage limits.
Part Context
This part belongs to the IXGH series of HiPerFAST IGBTs from IXYS. The series is designed for medium-power switching applications. The TO-247AD-3 package provides reliable isolation and heat sinking capabilities. It serves as a discrete solution for power conversion systems requiring robust semiconductor switching elements.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public data. Cross-reference with other 600V 75A TO-247 IGBTs from IXYS or other manufacturers only after verifying electrical parameter equivalence and pinout compatibility.
