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The IXYS IXGH40N60C2 is a single Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST™ and Lightspeed™ series. It features a PT IGBT type with a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 75 A. The device supports a pulsed collector current of 150 A and has a maximum power dissipation of 250 W. Key electrical parameters include a saturation voltage of 2.5 V at 15 V gate drive and 40 A collector current, a gate charge of 116 nC, and switching energies of 850 µJ (off). Turn-on and turn-off delays are 25 ns and 100 ns respectively, measured under test conditions of 480 V, 40 A, 4.7 Ohm, and 15 V. It operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity through authorized channels as the part status is obsolete. Confirm package integrity upon receipt, specifically checking for damage to the TO-247AD housing. Review manufacturer notices for any product change notifications or discontinuance alerts prior to finalizing procurement plans.
Select this component for applications requiring 600 V blocking voltage and up to 75 A continuous current. Ensure the thermal management system can handle 250 W dissipation within the specified temperature limits. Verify that the gate driver provides the required 15 V swing and sufficient peak current to manage the 116 nC gate charge effectively during high-frequency operation.
This device is part of the IXGH40N60 family, which includes variants like IXGH40N60B and IXGH40N60C3D1. It shares the same pinout and general form factor but differs in internal cell technology and switching characteristics compared to other series members. The TO-247AD package allows for direct mounting onto heatsinks using standard hardware.
Publicly confirmed substitutes include IXYH50N120C3, FGH40N60SMD-F085, and STGW40H65FB. Evaluate these alternatives based on specific voltage, current, and thermal requirements to ensure compatibility with existing circuit designs.