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Product Detailed Parameters
- Description：IGBT 600V 76A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：76 A
- Current - Collector Pulsed (Icm)：152 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 41A
- Power - Max：200 W
- Switching Energy：8mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：30ns/600ns
- Test Condition：480V, 41A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH41N60 is a single N-channel silicon IGBT in the HiPerFAST series. It features a TO-247AD package with screw mount installation. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 75 A at 25°C, and a collector-emitter saturation voltage of 2.1 V. The device has a power dissipation rating of 300 W, operates within a junction temperature range of -55°C to +150°C, and exhibits a fall time of 180 ns.
Feature Summary
- Utilizes HiPerFAST technology for low on-state conduction losses
- Features high current handling capability
- Includes MOS gate turn-on drive simplicity
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix variant against the manufacturer datasheet to confirm exact electrical characteristics and pinout compatibility. Confirm RoHS compliance status and check for obsolescence notices as older HiPerFAST variants may have limited availability or end-of-life status from the manufacturer.
Selection Notes
Select this component for applications requiring high efficiency and robust current handling in medium-power switching environments. Ensure the thermal management solution supports the specified power dissipation and junction temperature limits. Verify that the gate drive circuitry aligns with the standard MOS gate requirements for optimal switching performance.
Part Context
This part belongs to the IXYS HiPerFAST IGBT family, designed for high-efficiency power conversion. It utilizes an advanced HDMOSTM process to achieve ultra-low saturation voltage. The component is housed in international standard packages like TO-247AD, facilitating easy mounting with a single isolated screw.
Replacement Considerations
Potential substitutes include the IXGN60N60 and IXGH31N60. Verify that alternative parts match the 600V rating, 75A current capacity, and TO-247AD package form factor before integration.
