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The IXYS IXGH42N30C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST C3 series. It utilizes XPT technology for optimized switching performance and low conduction losses. The device features a TO-247AD package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 300 V, a continuous collector current of 75 A at 25°C, and a typical saturation voltage of 1.65 V. The component supports a maximum power dissipation of 480 W and operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix 'C3' against the manufacturer's latest datasheet to confirm the exact generation and parameter set. Ensure the ordering part number matches the required package variant and compliance standards. Cross-reference with authorized distributors to confirm current availability and lead times before finalizing procurement plans.
Select this component for applications requiring 300 V blocking voltage and high current handling up to 75 A. Consider the thermal resistance characteristics of the TO-247AD package for heat sink design. Evaluate the gate charge requirements against the driver capabilities to ensure optimal switching performance in the target circuit topology.
This IGBT is part of IXYS' HiPerFAST family, specifically the C3 generation which incorporates XPT (Extra Punch Through) technology. It serves as a high-efficiency switching solution for medium-power industrial and consumer electronics applications, replacing earlier generations like the C2 series with improved loss characteristics.
Potential substitutes include other 300 V, 75 A IGBTs in TO-247 packages from manufacturers such as Infineon or Mitsubishi. Verify pinout compatibility, saturation voltage levels, and switching energy values to ensure direct replacement without circuit modification.